unisonic technologies co., ltd 2sb1386 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r208-019,c low frequency pnp transistor ? features * excellent dc current gain characteristics * low v ce(sat) v ce(sat) = -0.35v (typ) (i c /i b = -4a/-0.1a) sot-89 1 ? ordering information order number pin assignment lead free halogen free package 1 2 3 packing 2sb1386l-x-ab3-r 2SB1386G-X-AB3-R sot-89 b c e tape reel
2sb1386 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r208-019,c ? absolute maximum ratings ( ta=25 c ,unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v collector current (dc) i c(dc) -5 a collector current (pulse)(note1) i c(pulse) -10 a collector power dissipation p c 0.5 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note 1. single pulse, pw=10ms 2. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = -50 a -30 v collector emitter breakdown voltage bv ceo i c = -1ma -20 v emitter base breakdown voltage bv ebo i e = -50 a -6 v collector-emitter satu ration voltage v ce(sat) i c /i b = -4a/-0.1a -1.0 v collector cut-off current i cbo v cb = -20v -0.5 a emitter cut-off current i ebo v eb = -5v -0.5 a dc current gain h fe v ce = -2v, i c = -0.5a 82 390 transition frequency f t v ce = -6v, i e = 50ma, f=30mhz 120 mhz output capacitance cob v cb = -20v, i e = 0a, f=1mhz 60 pf ? classification of h fe rank p q r range 82-180 120-270 180-390
2sb1386 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r208-019,c ? typical characteristics 0 -0.2 -2 -1m base to emitter voltage, v be (v) collector current vs. base to emitter voltage -1m-2m -5m -0.01-0.02 200 20 collector current, ic(a) dc current gain vs. collector current(1) 100 -0.4 -0.6 -0.8 -1.4 -1.2 -1.0 -2m -5m 0 -5 0 collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage -1 -0.4 -0.8 -1.6 -2.0 -1.2 -2 -3 -4 i b =0ma ta=25 -10ma -5ma -0.05 -0.1-0.2 -0.5 -1 500 5k collector-emitter saturation voltage vs. collector current (1) -10m -30ma -45ma -50ma -15ma -20ma -25ma 10 5 -2 -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current, ic(a) -1 -2 -20m -50m -100m -200m -500m -1 -5 -10 v ce = -2v ta=25 ta=100 ta= -25 -40ma -35ma -5 -10 50 1k 2k vc e = -5v vc e = -2v vc e = -1v ta=25 -1m-2m -5m -0.01-0.02 200 20 collector current, i c (a) dc current gain vs. collector current(2) 100 -0.05 -0.1-0.2 -0.5 -1 500 5k 10 5 -2 -5 -10 50 1k 2k vc e = -1v ta=100 -1m-2m -5m -0.01-0.02 200 20 collector current, ic(a) dc current gain vs. collector current 100 -0.05 -0.1-0.2 -0.5 -1 500 5k 10 5 -2 -5 -10 50 1k 2k vc e = -2v ta=25 ta=25 ta= -25 ta=100 ta= -25 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta=25 ic/i b =50/1 40/1 30/1 10/1
2sb1386 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r208-019,c ? typical characterics(cont.) collector output capacitance vs. collector-base voltage collector output capacitance, cob (pf) 100 50 20 10 collector to base voltage, v cb (v) 200 500 12 5 10 20 50 5 emitter current, i e (ma) transetion frequency vs. emitter current transetion frequency, f t (mhz) 20 50 100 500 100 1000 2 1 10 200 500 -0.1 -0.2 -0.5 -5 -1 -2 -20 -10 1000 collector-emitter saturation voltage vs. collector current (2) collector saturation voltage, v ce(sat) (v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current, ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta=100 ic/i b =10 collector-emitter saturation voltage vs. collector current (3) collector saturation voltage, v ce(sat) ( v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current, ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta= -25 ta=25 ic/i b =30 ta=100 ta= -25 ta=25 collector-emitter saturation voltage vs. collector current (iv) collector saturation voltage, v ce(sat) ( v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current, ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta=100 ic/i b =40 collector-emitter saturation voltage vs. collector current (v) collector saturation voltage, v ce(sat) (v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current, ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta= -25 ta=25 ic/i b =50 ta=100 ta= -25 ta=25 200 1000 vc e = -6v ta=25 ta=25 f =1mhz i e =0a -50
2sb1386 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r208-019,c ? typical characterics(cont.) 1000 -0.1 20 emitter to base voltage, v eb (v) emitter input capacitance vs. emitter- base voltage emitter input capacitance, cib (pf) 50 -0.2 -0.5 -2 -5 -1 100 200 -10 500 i c =0a ta=25 f=1mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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